? semiconductor components industries, llc, 2006 march, 2006 ? rev. 2 1 publication order number: 80SQ045N/d 80SQ045N preferred device axial lead rectifier . . . employing the schottky barrier principle in a large area metal ? to ? silicon power diode. state ? of ? the ? art geometry features epitaxial construction with oxide passivation and metal overlap contact. ideally suited for use as rectifiers in low ? voltage, high ? frequency inverters, free wheeling diodes, and polarity protection diodes. ? high current capability ? low stored charge, majority carrier conduction ? low power loss/high efficiency ? highly stable oxide passivated junction ? guard ? ring for stress protection ? low forward voltage ? high surge capacity these devices are available in pb ? free package(s). specifications herein apply to both standard and pb ? free devices. please see our website at www.onsemi.com for specific pb ? free orderable part numbers, or contact your local on semiconductor sales office or representative. mechanical characteristics: ? case: epoxy, molded ? weight: 1.1 gram (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 220 c max. for 10 seconds, 1/16 from case ? shipped in plastic bags, 500 per bag ? available tape and reeled, 1500 per reel, by adding a ?rl?? suffix to the part number ? polarity: cathode indicated by polarity band ? esd protection: human body model > 4000 v (class 3) esd protection: machine model > 400 v (class c) maximum ratings rating symbol max unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 45 v average rectified forward current t l = 75 c (psi jl = 12 c/w, p.c. board mounting, see note 2) i o 8.0 a non ? repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 140 a operating and storage junction temperature range (reverse voltage applied) t j , t stg ? 65 to +125 c voltage rate of change (rated v r ) dv/dt 10 v/ns device package shipping ordering information http://onsemi.com axial lead case 267 ? 05 (do ? 201ad) style 1 schottky barrier rectifier 8.0 amperes preferred devices are recommended choices for future use and best overall value. 80SQ045N axial lead 500 units/bag 80SQ045Nrl axial lead 1500/tape & reel marking diagram 80SQ045N 80SQ045N= device code
80SQ045N http://onsemi.com 2 thermal characteristics characteristic symbol 0.9 in x 0.9 in copper pad size 6.75 in x 6.75 in copper pad size unit thermal resistance ? junction ? to ? lead (see note 2 ? mounting data) thermal resistance ? junction ? to ? ambient (see note 2 ? mounting data) r jl r ja 13 50 12 40 c/w electrical characteristics (t l = 25 c unless otherwise noted) characteristic symbol max unit maximum instantaneous forward voltage (note 1) (i f = 8.0 amps, t l = 25 c) v f 0.55 v maximum instantaneous reverse current @ rated dc voltage (note 1) t l = 25 c t l = 100 c i r 1.0 50 ma 1. pulse test: pulse width = 300 s, duty cycle = 2.0%. figure 1. typical forward voltage v f , instantaneous voltage (volts) 30 10 1 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 figure 2. maximum forward voltage 0.1 figure 3. typical reverse current v r , reverse voltage (volts) 1e ? 01 1e ? 02 1e ? 03 1e ? 04 35 30 25 10 20 15 5 0 1e ? 06 i f , instantaneous forward current (amps) i r , instantaneous reverse current (amps) 50 45 40 1e ? 05 125 c 25 c 100 c 75 c 125 c 25 c 100 c 75 c v f , instantaneous voltage (volts) 30 10 1 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 i f , instantaneous forward current (amps) 125 c 25 c 100 c 75 c mbr845 v r , reverse voltage (volts) figure 4. typical capacitance f = 1 mhz t j = 25 c 100 10 1 0.1 c, capacitance (pf) 100 1000 10,000
80SQ045N http://onsemi.com 3 r ja ( c/w) figure 5. r ja versus copper area see note 2 10 4 2 0 copper area (sq in) 30 t l , lead temperature ( c) figure 6. current derating ? lead square wave 140 40 20 0 i f , average forward current (amps) 0 i o , average forward current (amps) figure 7. forward power dissipation t j = 125 c 10 6 2 0 p fo , average power dissipation (watts) 0 35 40 45 50 55 60 65 70 75 8 6 80 60 100 120 1 2 3 4 5 6 7 8 9 dc r jl = 12 c/w 48 0.5 1 1.5 2 2.5 3 3.5 4 4.5 square wave dc note 2 ? mounting data p.c. board with 6.75 sq. in. copper surface. board ground plane l = 3/8 0.1 t, time (sec) 100 1.0 0.001 10 1 0.1 0.0001 0.1 1000 figure 8. thermal response, junction ? to ? ambient 0.2 0.01 single pulse p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 0.001 0.01 r(t), normalized effective transient thermal resistance d = 0.5 0.05 copper area = 0.271 sq. in. r ja = 61.8 c/w
80SQ045N http://onsemi.com 4 package dimensions axial lead case 267 ? 05 (do ? 201ad) issue g notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 1: pin 1. cathode (polarity band) 2. anode 1 2 k a k d b dim min max min max millimeters inches a 0.287 0.374 7.30 9.50 b 0.189 0.209 4.80 5.30 d 0.047 0.051 1.20 1.30 k 1.000 ??? 25.40 ??? on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 80SQ045N/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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